Discrete Random Dopant Fluctuation Impact on Nanoscale Dopant-Segregated Schottky-Barrier Nanowires

作者：Afzalian Aryan^*; Flandre Denis

来源：IEEE Electron Device Letters, 2012, 33(9): 1228-1230.

DOI：10.1109/LED.2012.2203350

• Dopant segregation (DS)
• nonequilibrium Green%26apos
• s NEGF) quantum simulations
• random dopant fluctuation (RDF)
• Schottky barrier (SB)

The impact of discrete random dopant fluctuations on 10-nm-long high-performance Schottky-barrier (SB) dopant-segregated (DS) nanowire MOSFETs is investigated through nonequilibrium Green%26apos;s function quantum simulations. Using DS, nanoscale SB-FETs could outperform standard doped source and drain FETs in terms of I-ON/I-OFF. By reintroducing dopants in SB, however, variability problems are unavoidable and will be strong, at least for thin-width SB-FETs, because of the dopant influence on the SB profile on which the tunneling current is quite sensitive.

• 出版日期2012-9