摘要
The structural relaxation of nanographite ball-milled in argon atmosphere and stored in evacuated ampoules, has been studied by monitroing the evolution of the Raman spectra. Reduction of some Raman bands associated with "in-plane" structural defects, such as vacancies, dislocations or grain boundaries, and those associated with "out-of-plane" defects, such as stacking faults, is accompained by the rise of new bands around 1180 and 2000 cm(-1). The development of these bands is suppressed in nanographite samples exposed to a flux of pure anhydrous hydrogen.
- 出版日期2008-10