摘要

The new thiogallate Na-5(Ga4S)(GaS4)(3)center dot 6H(2)O has been prepared solvothermally, using 3,5-dimethyl pyridine as a solvent, and characterised by powder and single crystal X-ray diffraction. This material, which exhibits a three-dimensional crystal structure, crystallises in the cubic space group F (4) over bar 3c (a = 17.557(4) angstrom). The crystal structure contains octahedral building blocks [Ga4S (GaS4)(6)](20-), linked into a three-dimensional network with a perovskite-type topology, and sodium hydrate clusters, [Na-5(H2O)(6)](5+), filling the cavities in the [Ga4S(GaS4)(6/2)](5-) framework. UV-Vis diffuse reflectance measurements indicate that this material is a wide band gap semiconductor, with a band gap of ca. 4.4 eV.

  • 出版日期2011-5