Dual broadband photodetector based on interband and intersubband transitions in InAs quantum dots embedded in graded InGaAs quantum wells

作者：Passmore Brandon S; Wu Jiang; Manasreh M O^*; Salamo G J

来源：Applied Physics Letters, 2007, 91(23): 233508.

DOI：10.1063/1.2822412

Two broadband photoresponse from InAs quantum dots embedded in graded InGaAs quantum well photodetectors were observed in the spectral regions of 4-12 mu m (midinfrared band) and 0.5-1.0 mu m (near-infrared-visible band). The midinfrared band is attributed to the intersubband transitions within the quantum dots and was observed at temperatures less than 80 K. The near-infrared-visible band is attributed to interband transitions and is observed in the temperature range of 77-300 K. The room temperature detectivity of the near-infrared-visible band is estimated to be on the order of similar to 3.0x10(8) cm root Hz/W with a bias voltage less than 1.0 V.

• 出版日期2007-12-3