Analog Synaptic Behavior of a Silicon Nitride Memristor

作者：Kim Sungjun^*; Kim Hyunjin; Hwang Sungmin; Kim Min Hwi; Chang Yao Feng; Park Byung Gook^*

来源：ACS Applied Materials & Interfaces, 2017, 9(46): 40420-40427.

DOI：10.1021/acsami.7b11191

• memristor
• analog resistive switching
• silicon nitride
• synapse
• spike-timing-dependent plasticity

In this paper, we present a synapse function using analog resistive-switching behaviors in a SiNx-based memristor with a complementary metal-oxide-semiconductor compatibility and expandability to three-dimensional crossbar array architecture. A progressive conductance change is attainable as a result of the gradual growth and dissolution of the conducting path, and the series resistance of the AlOy layer in the Ni/SiNx/AlOy/TiN memristor device enhances analog switching performance by reducing current overshoot. A continuous and smooth gradual reset switching transition can be observed with a compliance current limit (>100 mu A), and is highly suitable for demonstrating synaptic characteristics. Long-term potentiation and long-term depression are obtained by means of identical pulse responses. Moreover, symmetric and linear synaptic behaviors are significantly improved by optimizing pulse response conditions, which is verified by a neural network simulation. Finally, we display the spike-timing-dependent plasticity with the multipulse scheme. This work provides a possible way to mimic biological synapse function for energy-efficient neuromorphic systems by using a conventional passive SiNx layer as an active dielectric.

• 出版日期2017-11-22