摘要

Near-infrared (NIR)-sensitive hybrid bulk heterojunction solar cells were developed using NIR-absorbing HgTe quantum dots (QDs) and a low-bandgap polymer, poly[2,6-(4,4%26apos;-bis-(2-ethylhexyl)dithieno[3,2-b:2%26apos;,3%26apos;-d]silole)-alt-4,7(2,1,3-benzothiadiazole)] (PSBTBT). Hybrid composites of HgTe QDs and PSBTBT facilitate broad-range exploitation of the solar spectrum and efficient carrier dissociation prior to recombination. Nanostructures were formed on the surface of the hybrid composite via a nanoimprinting process using an anodic aluminum oxide (AAO) mold. This contributes to optical light scattering for efficient utilization of light up to the NIR region and enlarged photoactive layer-electrode interfacial areas for improving charge extraction, increasing the overall efficiency from 1.09 to 1.41%.

  • 出版日期2014-7