Secondary cluster ions Ge (2) (-) and Ge (3) (-) for improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures

作者：Drozdov M N^*; Drozdov Yu N; Lobanov D N; Novikov A V; Yurasov D V

来源：Semiconductors, 2010, 44(3): 401-404.

DOI：10.1134/S106378261003022X

New possibilities of improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures using a TOF.SIMS-5 spectrometer are discussed. Contributions of ion sputtering artifacts and instrumental effects to depth resolution were analyzed in detail using a Talysurf CCI-2000 optical profilometer to control the shape and roughnesses of the sputtering crater bottom. It was found that the use of Cs+ ions for sputtering makes it possible to minimize roughness development during depth profiling of GeSi/Si structures to depths of 1-1.5 mu m. It was shown that the use of secondary cluster ions Ge (2) (-) and Ge (3) (-) instead of Ge (1) (-) and Ge+ allows narrowing the transition regions in measured profiles.

• 出版日期2010-3