Nonvolatile Memory Functionality of ZnO Nanowire Transistors Controlled by Mobile Protons

作者：Yoon Jongwon; Hong Woong Ki; Jo Minseok; Jo Gunho; Choe Minhyeok; Park Woojin; Sohn Jung Inn; Nedic Stanko; Hwang Hyungsang; Welland Mark E; Lee Takhee^*

来源：ACS Nano, 2011, 5(1): 558-564.

DOI：10.1021/nn102633z

• ZnO nanowires
• field effect transistors
• nonvolatile memory
• mobile protons

We demonstrated the nonvolatile memory functionality Of ZnO nanowire field effect transistors (FETs) using mobile protons that are generated by high-pressure hydrogen annealing (HPHA) at relatively low temperature (400 degrees C). These ZnO nanowire devices exhibited reproducible hysteresis reversible switching, and. nonvolatile memory behaviors in comparison with those of the conventional FET devices. We show that the memory characteristics are attributed to the movement of protons between the Si/SiO(2) interface and the SiO(2)/ZnO nanowire Interface by the applied gate electric field. The memory mechanism is explained in terms of the tuning of interface properties, such as effective electric field, surface charge density, and surface barrier Potential due to the movement of protons in the SiO(2) layer, consistent with the UV photoresponse Characteristics of nanowire memory devices. Our study will further provide a useful route of creating memory functionality and incorporating proton based storage elements onto a modified CMOS platform for FET memorydevices using nanomaterials.

• 出版日期2011-1