Universal scaling of resistivity in bilayer graphene

作者：Gopinadhan Kalon^*; Shin Young Jun; Yang Hyunsoo

来源：Applied Physics Letters, 2012, 101(22): 223111.

DOI：10.1063/1.4769042

We report the temperature dependent electrical transport properties of gated bilayer graphene devices. We see a clear evidence of insulating behavior due to electron-hole charge puddles. The electrical resistivity increases while the mobility decreases with decreasing temperature, a characteristic due to carrier inhomogeneity in graphene. The theoretical fittings using an empirical formula of single electron tunneling indicate that electrical resistivity follows a universal curve with a scaling parameter. The scaling parameter is determined to be a measure of the fluctuations in the electron-hole puddle distribution.

• 出版日期2012-11-26