An analysis of segregation during horizontal ribbon growth of silicon

作者：Daggolu Parthiv; Yeckel Andrew; Derby Jeffrey J^*

来源：Journal of Crystal Growth, 2014, 390: 80-87.

DOI：10.1016/j.jcrysgro.2013.12.021

• Computer simulation
• Convection
• Heat transfer
• Segregation
• Edge defined film fed growth
• Semiconducting silicon

A finite element, thermal capillary model is applied to study solute segregation in the horizontal ribbon growth of silicon. Results show a complicated redistribution of solute into the growing ribbon, with nearly constant composition in the upper portion of the crystal and high levels of solute incorporation in the lower portion. The redistribution pattern is explained by convective flow patterns and interfacial geometry in the system. Lower values of equilibrium partition coefficient and solute melt diffusivity contribute to more inhomogeneous crystal composition. Faster pull rates lead to more pronounced redistribution of solute in the crystal. Paradoxically, the inhomogeneous concentration levels in HRG ribbon may be beneficial; impurities accumulate towards a narrow bottom portion of the crystal, leaving a majority of the crystal relatively pure.

• 出版日期2014-3-15