Droplet epitaxy of zinc-blende GaN quantum dots

作者：Schupp T^*; Meisch T; Neuschl B; Feneberg M; Thonke K; Lischka K; As D J

来源：Journal of Crystal Growth, 2010, 312(21): 3235-3237.

DOI：10.1016/j.jcrysgro.2010.07.049

• Atomic force microscopy
• Growth models
• Nanostructures
• Reflection high energy electron diffraction
• Molecular beam epitaxy
• Nitrides

Zinc-blende GaN quantum dots were grown on 3C-AlN(0 0 1) by a vapor-liquid-solid process in a molecular beam epitaxy system. We were able to control the density of the quantum dots in a range of 5 x 10(8)-5 X 10(12) cm(-2). Photoluminescence spectroscopy confirmed the optical activity of the GaN quantum dots in a range of 10(11)-5 x 10(12) cm(-2). The data obtained give an insight to the condensation mechanism of the vapor-liquid-solid process in general, because the GaN quantum dots condense in metastable zinc-blende crystal structure supplied by the substrate, and not in the wurtzite crystal structure expected from free condensation in the droplet.

• 出版日期2010-10-15