AC Performance of Polysilicon Leaky-Mode MSM Photodetectors

作者：Pownall Robert^*; Kindt Joel; Nikkel Phil; Lear Kevin L

来源：Journal of Lightwave Technology, 2010, 28(18): 2724-2729.

DOI：10.1109/JLT.2010.2063016

• Complementary metal-oxide-semiconductor (CMOS)-compatible optoelectronic integrated circuit
• leaky-mode metal-semiconductor-metal photodetectors
• optical interconnect
• photoconductivity

Pulse response of polysilicon metal-semiconductor-metal (MSM) photodetectors fabricated in a standard CMOS processes is described, including demonstration of pulse full-width at half-max (FWHM) of 1.32 ns. Pulse FWHM as low as 0.81 ns has been measured, as have 10%-90% rise times of 0.39 ns. Measured detector performance is limited by laser diode modulation capabilities. An analytic expression for the time domain response in the presence of body and contact recombination is reported.

• 出版日期2010-9-15