Modeling of reactive sputtering of AlN

作者：Tong Hongbo^*; Ba Dechun; Wen Lishi

来源：Chinese Journal of Vacuum Science and Technology, 2007, 27(5): 377-379.

• AlN
• Aluminum nitride
• Berg model
• Modeling
• Secondary electron emission coefficients

Reactive sputtering of aluminum nitride thin films has been studied. A drastic transition between metallic and compound modes has been observed due to a large difference in the secondary electron emission coefficients of aluminum and aluminum nitride. To describe the experimental results quantitatively, a reactive sputtering model has been developed. The model is fundamentally based on Berg s model in 1988, but includes the change in the secondary emission coefficient of the target. Based on this model, it is possible to predict the reactive sputtering behaviour, the calculated results agree well with measurements.

• 出版日期2007
• 单位东北大学