Design and Fabrication of MOSFET Type Hydrogen Gas Sensor Using MEMS Process

作者：Kim Bum Joon; Kim Jung Sik^*

来源：Journal of the Korean Institute of Metals and Materials, 2011, 49(4): 304-312.

DOI：10.3365/KJMM.2011.49.4.304

• hydrogen absorbing materials
• sputtering
• electrical properties
• electrical conductivity/resistivity
• MOSFET

In this study, MOSFET type micro hydrogen gas sensors with platinum catalytic metal gates were designed, fabricated, and their electrical characteristics were analyzed. The devised MOSFET Hydrogen Sensors, called MHS-1 and -2, were designed with a platinum gate for hydrogen gas adsorption, and an additional sensing part for higher gas sensitivity and with a micro heater for operation temperature control. In the electrical characterization of the fabricated Pt-gate MOSFET (MHS-1), the saturated drain current was 3.07 mA at 3.0 V of gate voltage, which value in calculation was most similar to measurement data. The amount of threshold voltage shift and saturated drain current increase to Variation of hydrogen gas concentration were calculated and the hydrogen gas sensing properties were anticipated and analyzed.

• 出版日期2011-4