Aryl Halide C-C Coupling on Ge(001):H Surfaces

作者：Olszowski P; Zapotoczny B; Prauzner Bechcicki J S^*; Vilas Varela M; Perez D; Guitian E; Pena D; Szymonski M

来源：Journal of Physical Chemistry C, 2015, 119(49): 27478-27482.

DOI：10.1021/acs.jpcc.5b08883

Thermally induced aryl halide C-C coupling on surfaces of hydrogen-passivated germanium, Ge(001):H, has been investigated by scanning tunneling microscopy at room temperature. It has been shown that an atomic hydrogen buffer layer is essential for C-C coupling to occur. Competition between dehydrogenation of the passivating layer and dehalogenation of molecular precursors as a function of substrate temperature during the deposition of molecules is discussed.

• 出版日期2015-12-10