科研之友
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摘要
The resistance versus temperature across the metal-insulator transition (MIT) of V2O3 nanodevices exhibits multiple discontinuous jumps. The jump sizes range over three orders of magnitude in resistance and their distribution follows a power law, implying that the MIT of V2O3 occurs through avalanches. While the maximum jump size depends on the device size, the power law exponent for V2O3 is independent of device geometry and different than the one found earlier in VO2. A two-dimensional random percolation model exhibits a power law distribution different from the one found in V2O3. Instead, the model gives a similar exponent found in another vanadium oxide, VO2. Our results suggest that the MITs of VO2 and V2O3 are produced by different mechanisms.
- 出版日期2015-8-28
