Ultra-low reflectivity polycrystalline silicon surfaces formed by surface structure chemical transfer method

作者：Imamura Kentaro; Franco Francisco C Jr; Matsumoto Taketoshi; Kobayashi Hikaru^*

来源：Applied Physics Letters, 2013, 103(1): 013110.

DOI：10.1063/1.4813089

A nanocrystalline Si layer can be formed by the surface structure chemical transfer (SSCT) method in which a platinum mesh is instantaneously contacted with polycrystalline Si wafers immersed in hydrogen peroxide plus hydrofluoric acid solutions. The polycrystalline Si surface after the SSCT method possesses an ultra-low reflectivity. The nanocrystalline Si layer possesses a 100-150 nm thickness, and gives a photoluminescence with a peak maximum at similar to 670 nm, indicating band-gap widening. The minority carrier lifetime of as-sliced Si wafers greatly increases after the SSCT method most probably due to the enlargement of the nanocrystalline Si band-gap.

• 出版日期2013-7-1