Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe

作者：Wang Bing; Wang Cong; Kohen David A; Made Riko I; Lee Kenneth Eng Kian; Kim Taewan; Milakovich Tim; Fitzgerald Eugene A; Yoon Soon Fatt; Michel Jurgen

来源：Journal of Crystal Growth, 2016, 441: 78-83.

DOI：10.1016/j.jcrysgro.2016.02.011

• Metalorganic vapor phase epitaxy
• Semiconducting III-V materials
• Semiconducting gallium compounds
• Semiconducting silicon compounds
• Light emitting diodes

GaAsP has important applications for solar cells and light-emitting diodes on silicon substrates. Here we demonstrate that GaAsP can be directly grown by metal-organic chemical vapor deposition on previously-prepared lattice-matched SiGe virtual substrates, without prior in-situ growth of SiGe. By optimizing the growth pressure and AsH3 pre-exposure time, the surface morphology of GaAsP is improved and the pinhole densities are reduced by two orders of magnitude from 2.4 x 10(7)/cm(2) to 1.2 x 10(5)/cm(2). The physics is suggested to be an optimization between complete As-termination and AsH3 etching effect of SiGe surface.

• 出版日期2016-5-1
• 单位MIT; 南阳理工学院