A 50 ns Verify Speed in Resistive Random Access Memory by Using a Write Resistance Tracking Circuit

作者：Sheu Shyh Shyuan^*; Cheng Kuo Hsing; Chen Yu Sheng; Chen Pang Shiu; Tsai Ming Jinn; Lo Yu Lung

来源：IEICE - Transactions on Electronics, 2012, E95C(6): 1128-1131.

DOI：10.1587/transele.E95.C.1128

• Resistive RAM (RRAM)
• verify
• write resistance tracking circuit

This paper proposes a write resistance tracking circuit (WRTC) to improve the memory window of HfOx-based resistive memory. With a 50-ns single voltage pulse, the minimal resistance of the high resistance state in the 1-kb array of resistive switching elements can increase from 25 k Omega to 65 k Omega by using the proposed verify circuit. The WRTC uses the transition current detection method based on the feedback of the memory cell to control the write driver. The WRTC achieves distinct bistable resistance states, avoids the occurrence of over-RESET, and enhances the memory window of the RRAM cell.

• 出版日期2012-6
• 单位中央民族大学