Al(Ga)N/GaN high electron mobility transistors on silicon

作者：Cordier Yvon^*

来源：Physica Status Solidi A-Applications and Materials Science, 2015, 212(5): 1049-1058.

DOI：10.1002/pssa.201532070

• GaN
• heteroepitaxy
• heterostructures
• high electron mobility transistors

In this paper, a review of the different buffer layers and heterostructures developed for Al(Ga)N/GaN high electron mobility transistors (HEMTs) on silicon substrate is presented. The difficulties associated with the barrier thinning and the rise of the Al content are discussed. Finally, we compare the DC output characteristics and the small and large signal RF performances of thin barrier AlGaN/GaN HEMTs, thick barrier gate recessed ones, and ultra-thin AlN barrier devices.

• 出版日期2015-5