摘要

The amorphization of single-crystal KTiOPO4 under H and He ion coimplantation is explored by using transmission electron microscopy, Rutherford backscattering spectrometry and high resolution x-ray diffraction. KTiOPO4 crystalline wafers were coimplanted with 110 keV H and 190 keV He at fluences in the range of (6-10) x 10(16) cm(-2). A 500 nm width amorphization layer and lattice deformation are detected after ion implantation. The critical dpa threshold of 0.26 for continuous amorphous layer formation is obtained in this study. Lattice expansion and contraction is detected and found to be dependent on crystal orientation. These results are discussed in terms of accumulation of damage and lattice structure of KTiOPO4.