Nucleation and coalescence behavior for epitaxial ZnO layers on ZnO/sapphire templates grown by halide vapor phase epitaxy

作者：Fujii Tetsuo^*; Yoshii Naoki; Masuda Rui; Tanabe Tetsuhiro; Kamisawa Akira; Hosaka Shigetoshi; Kumagai Yoshinao; Koukitu Akinori

来源：Journal of Crystal Growth, 2009, 311(4): 1056-1059.

DOI：10.1016/j.jcrysgro.2008.12.026

• Crystal structure
• Nucleation
• Vapor phase epitaxy
• Oxide
• Zinc compounds

The effects of growth conditions for ZnO layers grown by halide vapor phase epitaxy (HVPE) on (0001) ZnO/sapphire templates are investigated. Micron-sized pyramidal ZnO islands nucleate on the template at the initial growth stage and each island grows differently with the process conditions. The high temperature of 1000 degrees C promotes a lateral growth rate and coalescence between the islands. The full-width at half-maximums (FWHMs) of X-ray rocking curves for the (0002) and (10 (1) over bar1) planes from a fully coalesced ZnO layer are quite narrow values below 160 arcsec. Transmission electron microscopy (TEM) reveals that screw character dislocations in the template do not propagate into the HVPE-grown layer.

• 出版日期2009-2-1