Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide

作者：Yang, F M^*; Chang, T C; Liu, P T; Yeh, P H; Yu, Y C; Lin, J Y; Sze, S M; Lou, J C

来源：Applied Physics Letters, 2007, 90(13): 132102.

DOI：10.1063/1.2716845

In this letter, the Co nanocrystals using SiO2 and HfO2 as the tunneling and the control dielectric with memory effect has been fabricated. A significant memory effect was observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window was estimated to similar to 1 V. The retention characteristics were tested to be robust. Also, the endurance of the memory device was not degraded up to 10(6) write/erase cycles. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.

• 出版日期2007-3-26
• 单位清华大学; 中山大学