摘要
The present study investigated the effect of co-doping with elemental crystal Ge or/and GeO2 on the TiO2-Ta2O5-BaCO3 varistor ceramic. Results showed that with the doping content of Ta2O5 and BaCO3 of 0.3 mol% and 0.2 mol%, respectively, the optimum doping content of 0.4 mol% Ge and 1.2 mol% GeO2 exhibited the highest alpha value (alpha = 12.1), lower breakdown voltage E-B (E-B = 20.8 V mm(-1)), lesser leakage current J(L) (J(L) = 11.5 mu A cm(-2)), and highest grain boundary barrier phi(B) (phi(B) = 0.93 eV). The microstructural analyses indicated that Ge-G-O-2 co-doping notably changed the TiO2-Ta2O5-BaCO3 ceramic microstructure, increased alpha, and decreased EB. In addition, Ge and GeO2, which function as sintering aids, reduced the sintering temperature caused by the low melting point; the best sintering temperature was 1280 degrees C for TiO2-Ta2O5-BaCO3-Ge-G-O-2 ceramic.
- 出版日期2015-11-15
- 单位昆明理工大学