Memristive operation mode of floating gate transistors: A two-terminal MemFlash-cell

作者：Ziegler M^*; Oberlaender M; Schroeder D; Krautschneider W H; Kohlstedt H

来源：Applied Physics Letters, 2012, 101(26): 263504.

DOI：10.1063/1.4773300

A memristive operation mode of a single floating gate transistor is presented. The device resistance varied accordingly to the charge flow through the device. Hysteretic current-voltages including a resistance storage capability were observed. These experimental findings are theoretically supported by a capacitive based model. The presented two-terminal MemFlash-cell can be considered as a potential substitute for any memristive device (especially for reconfigurable logic, cross-bar arrays, and neuromorphic circuits) and is basically compatible with current Si-fabrication technology. The obvious trade-off between a memristive device based on a state-of-the-art silicon process technology and power consumption concerns will be discussed.

• 出版日期2012-12-24