Design and analysis of compact MMIC switches utilising GaAs pHEMTs in 3D multilayer technology

作者：Haris Norshakila^*; Kyabaggu Peter B K; Alim Mohammad A; Rezazadeh Ali A

来源：Semiconductor Science and Technology, 2017, 32(5): 055014.

DOI：10.1088/1361-6641/aa681b

• GaAs
• MMIC
• pHEMT
• SPST
• SPDT
• switch

In this paper, we demonstrate for the first time the implementation of three-dimensional multilayer technology on GaAs-based pseudomorphic high electron mobility transistor (pHEMT) switches. Two types of pHEMT switches are considered, namely single-pole singlethrow (SPST) and single-pole double-throw (SPDT). The design and analysis of the devices are demonstrated first through a simulation of the industry-recognised standard model, TriQuint's Own Model-Level 3, developed by TriQuint Semiconductor, Inc. From the simulation analysis, three optimised SPST and SPDT pHEMT switches which can address applications ranging from L to X bands, are fabricated and tested. The performance of the pHEMT switches using multilayer technology are comparable to those of the current state-of-the-art pHEMT switches, while simultaneously offering compact circuits with the advantages of integration with other MMIC components.

• 出版日期2017-5