摘要

Silicon (Si) is an attractive semiconductor which has broad applications in photovoltaic fields due to its low cost and narrow band gap (similar to 1.1 eV). Taking advantage of a Si-based metal-insulator-semiconductor (MIS) device, which has high electron-hole separation efficiency due to the confined electron and hole transport directions, for the first time, a Pt/ZrO2/n-Si photoanode is directly employed as the anode for the ethanol oxidation reaction (EOR). When exposed to visible light irradiation, the Pt/ZrO2/n-Si photoanode exhibits apparently improved EOR activity and durability. This work provides a simple way to fabricate Si-based EOR photoanodes, which has potential for application in direct ethanol fuel cells.