摘要

NdSrNi0.8Cu0.2O4-delta (NSNCO) thin films were grown by pulsed laser deposition (PLD) on LaAlO3 and (110)SrTiO3 substrates. NSNCO thin films were (001) and (103) oriented on (100) LaAlO3 and (110)SrTiO3, respectively, as evidenced by the theta-20 X-ray diffraction. The high crystalline quality was illustrated by low value of rocking curve (Delta omega=0.1-0.5 degrees for (001) films and about 1 degrees for (103) films). In-plane ordering was probed by X-ray diffraction phi-scans, evidencing the epitaxial growth on both substrates. The microstructure of films investigated by scanning electron microscopy was strongly influenced by deposition conditions. Four probe electrical resistivity measurements were performed versus temperature in the range 77-300 K. The resistivity was found to be 0.004 Omega cm at room temperature. Some bilayers combining a ferroelectric oxide and NSNCO, i.e. SrBi2Nb2O9 (SBN) and NdSrNi0.8Cu0.2O4-delta, were grown by PLD on both substrates. The possibility to control (001)- and (116)-oriented epitaxial SBN thin films was proved by the X-ray diffraction analysis.

  • 出版日期2009-4-15