Fabrication of source and drain regions of self-aligned ZrInZnO thin-film transistors using a solution of tin and poly(propylene carbonate)

作者：Huynh Thi Cam Tu^*; Inoue Satoshi; Nishioka Kiyoshi; Fujimoto Nobutaka; Karashima Shuichi; Shimoda Tatsuya

来源：Japanese Journal of Applied Physics, 2015, 54(10): 106501.

DOI：10.7567/JJAP.54.106501

In this paper, we report a novel doping method based on a solution process to fabricate source and drain regions of a self-aligned ZrInZnO thin-film transistor (TFT). A solution of Sn compound mixed with poly(propylene carbonate) (PPC) was used to allow Sn to be diffused into ZrInZnO source and drain regions. The resistivity of the obtained Sn-doped ZrInZnO was reduced dramatically from 4 x 10(3) to 1.8 x 10(-2) Omega cm. The self-aligned ZrInZnO TFT exhibited a mobility of 20cm(2)V(-1)s(-1), a threshold voltage of 1V, a subthreshold swing of 0.2V/decade, and an ON/OFF ratio of 7. These results indicate that the solution-based doping could provide an alternative way to substitute the ion implantation or plasma treatment which are conducted under vacuum for fabrication of the self-aligned oxide semiconductor TFT.

• 出版日期2015-10