Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties

作者：Usachov D^*; Vilkov O; Grueneis A; Haberer D; Fedorov A; Adamchuk V K; Preobrajenski A B; Dudin P; Barinov A; Oehzelt M; Laubschat C; Vyalikh D V

来源：Nano Letters, 2011, 11(12): 5401-5407.

DOI：10.1021/nl2031037

• Graphene
• nitrogen doping
• electronic structure
• synthesis
• triazine
• ARPES

A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 8096 of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of similar to 8 x 10(12) electrons per cm 2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoeinission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices.

• 出版日期2011-12