Major impacts of point defects and impurities on the carrier recombination dynamics in AlN

作者：Chichibu S F^*; Onuma T; Hazu K; Uedono A

来源：Applied Physics Letters, 2010, 97(20): 201904.

DOI：10.1063/1.3517484

Impacts of point defects and impurities on the carrier recombination dynamics in AlN are revealed by time-resolved spectroscopy and positron annihilation measurements. Intrinsically short low-temperature excitonic radiative lifetime (tau(R) similar to 10 ps) was elongated with the increase in Al-vacancy concentration up to 530 ps, irrespective of threading dislocation density. A continuous decrease in tau(R) with temperature rise up to 200 K for heavily doped samples revealed the carrier release from the band-tail formed due to impurities and point defects. Because room-temperature nonradiative lifetime was equally short for all samples, high temperature growth with appropriate defect management is necessary in extracting radiative nature of AlN.

• 出版日期2010-11-15