A Simplified Closed-Form Model and Analysis for Coaxial-Annular Through-Silicon Via in 3-D ICs

作者：Mei, Zheng; Dong, Gang^*

来源：IEEE Transactions on Components, Packaging and Manufacturing Technology, 2018, 8(9): 1650-1657.

DOI：10.1109/TCPMT.2018.2801885

• 3-D integrated circuit (IC)
• coaxial-annular through-silicon via (CA-TSV)
• wideband closed-form model

In this paper, we present a simplified closed-form model of a coaxial-annular through-silicon via (CA-TSV) in 3-D integrated circuits. The expressions for the calculations of the resistance, inductance, capacitance, and conductance (RLCG) for the CA-TSV are derived based on the electromagnetic theory. These formulas capture real current distributions, such as those of skin effects in metal conductors, as well as the eddy current loss in semiconductor regions. An electromagnetic field solver, ANSYS HFSS, is used for comparison with the closed-form expressions, therein revealing good agreement between the results of the simulation and analytical models across the frequency range. The maximum deviation is less than 5%, demonstrating the accuracy of the closed-form expressions. In addition, parametric studies are performed on the RLCG of the CA-TSV to further verify the accuracy of the proposed method and understand the main factors affecting the RLCG parameters.

• 出版日期2018-9
• 单位西安电子科技大学