An 88 nm gate-length In0.53Ga0.47As/In 0.52Al0.48As InP-based HEMT with fmax of 201 GHz

作者：Zhong Yinghui; Wang Xiantai; Su Yongbo; Cao Yuxiong; Jin Zhi^*; Zhang Yuming; Liu Xinyu

来源：Chinese Journal of Semiconductors, 2012, 33(7): 39-42.

DOI：10.1088/1674-4926/33/7/074004

• Channel currents
• Current gain cutoff frequency
• DC and RF characteristics
• Development time
• Exposure dose
• Gate recess
• Gate widths
• Gate-length
• High electron mobility transistor (HEMT)
• InAlAs/InGaAs
• InP
• Maximum oscillation frequency
• Maximum transconductance
• Millimeter-wave integrated circuits
• Residual resists
• Source-drain
• Trilayers

<正>An 88 nm gate-length In0.53Ga0.47As/In0.52Al0.48As InP-based high electron mobility transistor （HEMT） was successfully fabricated with a gate width of 2×50μm and source-drain space of 2.4μm.The T-gate was defined by electron beam lithography in a trilayer of PMMA/A1/UⅧ.The exposure dose and the development time were optimized,and followed by an appropriate residual resist removal process.These devices also demonstrated excellent DC and RF characteristics:the extrinsic maximum transconductance,the full channel current, the threshold voltage,the current gain cutoff frequency and the maximum oscillation frequency of the HEMTs were 765 mS/mm,591 mA/mm,-0.5 V,150 GHz and 201 GHz,respectively.The HEMTs are promising for use in millimeter-wave integrated circuits.

• 出版日期2012-7
• 单位西安电子科技大学