A 2-D semi-analytical model of parasitic capacitances for MOSFETs with high k gate dielectric in short channel

作者：Wang, Min; Ke, Dao-Ming^*; Xu, Chun-Xia; Wang, Bao-Tong

来源：Solid-State Electronics, 2014, 92: 35-39.

DOI：10.1016/j.sse.2013.10.017

• High k gate dielectric
• Parasitic capacitance
• 2-D semi-analytical model
• Eigenfunction expansion method

A 2-D semi-analytical model of parasitic capacitances for MOSFETs in ultra short channel, which takes the presence of high k gate dielectric into account, is developed. By using a semi-analytical method and an eigenfunction expansion method, we obtain part of expressions about capacitances. The model provides a good calculation method for parasitic capacitances and matches well with simulation results. It can be used in circuit simulation and device design directly.

• 出版日期2014-2
• 单位安徽大学