n-Type KCu3S2 microbelts: optical, electrical, and optoelectronic properties

作者：Wu, Chunyan^*; Wang, Wenjian; Wang, Xingang; Xu, Jun; Luo, Linbao; Chen, Shirong; Wang, Li; Yu, Yongqiang

来源：RSC Advances, 2014, 4(103): 59221-59225.

DOI：10.1039/c4ra12541j

• Composite hydroxide
• Electrical characterization
• Electrical transport properties
• Opto-electronic materials
• Optoelectronic properties
• Rapid response time
• Rectification ratio
• UV-Vis absorption spectroscopy

KCu3S2 microbelts with lengths up to 80 mm and widths of 200-800 nm have been synthesized using a composite-hydroxide mediated (CHM) approach and their optical, electrical and optoelectronic properties were systematically characterized for the first time. As-synthesized KCu3S2 microbelts were characterized to be semiconductors with a bandgap of 1.64 eV by UV-vis absorption spectroscopy and room-temperature PL spectroscopy. Ultraviolet photoelectron spectroscopy (UPS) and the electrical transport properties of the bottom-gate field-effect transistor (FET) revealed the n-type conduction of the KCu3S2 microbelts with a conductivity as high as similar to 1.85 x 10(3) S cm(-1). A KCu3S2/Au Schottky diode was fabricated, which showed a turn-on voltage of similar to 0.3 V, a rectification ratio of similar to 10(2) to 10(3), and an ideality factor of 2.1. The diode possessed a photoresponse ratio Ilight/Idark similar to 50 and a rapid response time less than 0.5 s. The systematical electrical characterization of KCu3S2 microbelts sheds light on the potential application of KCu3S2 as a photovoltaic or optoelectronic material.

• 出版日期2014
• 单位合肥工业大学