Dislocation imaging for electronics application crystal selection

作者：Secroun Aurelia^*; Brinza Ovidiu; Tardieu Andre; Achard Jocelyn; Silva Francois; Bonnin Xavier; De Corte Katrien; Anthonis Ans; Newton Mark E; Ristein Juergen; Geithner Peter; Gicquel Alix

来源：Physica Status Solidi A-Applications and Materials Science, 2007, 204(12): 4298-4304.

DOI：10.1002/pssa.200776331

High power electronics are today a real challenge for large band gap materials. Devices as simple as switches have to work at ever higher powers and demand material with exceptional properties: in particular, a high breakdown voltage (at least a few 10(6) V/cm), a high mobility-lifetime product (at least 10(-3) cm(2/)V), and a relatively fast response. As far as diamond is concerned, only thick (100 Am) monocrystalline free-standing films of very good quality are expected to fulfill these requirements. Today's growth techniques still create many defects within the crystal that may deteriorate its electrical properties. It is thus our concern to identify which defects are involved and to find a strategy to select films with properties best suited for our power switching applications. Here, it is shown that nitrogen impurities are one major defect that control electrical properties as soon as 1 ppb is contained in the film and that, for lower values, dislocations seem to play a role. Besides, it is shown, that the choice of substrate is involved in the formation of those dislocations within the grown film.

• 出版日期2007-12