Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors

作者：Kang Chang Goo; Lee Young Gon; Lee Sang Kyung; Park Eunji; Cho Chunhum; Lim Sung Kwan; Hwang Hyeon Jun; Lee Byoung Hun^*

来源：Carbon, 2013, 53: 182-187.

DOI：10.1016/j.carbon.2012.10.046

The origin of the device instability of chemical vapor deposited graphene metal oxide semiconductor field effect transistor has been investigated while varying the characterization time scale from milliseconds to a few tens of seconds. When oxygen diffusion to the graphene interface was suppressed with Al2O3 passivation layer, the hysteresis activated with a, time scale over a few tens of seconds was reduced significantly at both electron and hole branches of current-voltage curves. However, a fast charge trapping process occurring within a few milliseconds was not affected by the passivation and became a dominant mechanism of hysteresis.

• 出版日期2013-3