Size-induced metal-to-semiconductor transition and room temperature sequential resonant tunneling in La0.5Sr0.5CoO3-delta quantum dots embedded in La0.5Sr0.5CoO3-delta nanotubes

作者：Liu Wei^*; Chen Yu; Quan Zuci; Guo Shishang; Li Meiya; Zhao Xing Zhong

来源：Applied Physics Letters, 2009, 95(8): 083125.

DOI：10.1063/1.3202759

• electrical conductivity transitions
• lanthanum compounds
• nanotubes
• resonant tunnelling
• semiconductor materials
• semiconductor quantum dots
• strontium compounds

The sequential resonant tunneling in La0.5Sr0.5CoO3-delta (LSCO) semiconductor quantum dots (QDs) arrays were observed by current-voltage measurements under room temperature. A series of spikelike current peaks are found, which are resulted from the accumulation and depletion of electrons tunneling through the QDs embedded in insulated barriers. Temperature dependent onset-voltage blueshift and number variation in current peaks are also observed. These results confirm the size-induced metal-to-semiconductor transition in LSCO.

• 出版日期2009-8-24
• 单位武汉大学