Nanometer scale study of HfO2 trap states using single electron tunneling force spectroscopy

作者：Winslow D W^*; Johnson J P; Williams C C

来源：Applied Physics Letters, 2011, 98(17): 172903.

DOI：10.1063/1.3580767

Standard methods to characterize trap states in dielectric films typically provide spatially averaged measurements. The development of single electron tunneling force spectroscopy has provided for the measurement of the energy of single trap states with atomic scale spatial resolution. In this letter, data taken on HfO2 films using this method is presented and discussed. Analysis of individual spectra shows that there is spatial variation in the density of trap states in these films. The spectra found by averaging data obtained from forty different locations shows good agreement with data taken via standard methods and with theoretical predictions.

• 出版日期2011-4-25