Dependence of the Noise Behavior on the Drain Current for Thin Film Transistors

作者：Tai Ya Hsiang^*; Chang Chun Yi; Hsieh Chung Lun; Yang Yung Hsuan; Chao Wei Kuang; Chen Huan Ean

来源：IEEE Electron Device Letters, 2014, 35(2): 229-231.

DOI：10.1109/LED.2013.2291565

• Thin-film transistor (TFTs)
• low frequency noise (LFN)
• amorphous indium-gallium-zinc oxide (a-IGZO)
• active pixel sensor (APS)

In this letter, a noise formula is newly proposed to calculate the low frequency noise for the three kinds of amorphous silicon, low temperature polycrystalline silicon, and amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). It is found that the noise behavior of the TFT depends on its drain current in a simple manner. Based on the analysis, the ratios of drain current to the noise level for these TFTs are compared. It reveals that a-IGZO TFT is the best candidate to be used in the active pixel sensor.

• 出版日期2014-2