Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture

作者：Nadtochiy A M^*; Blokhin S A; Kuz' menkov A G; Maksimov M V; Maleev N A; Troshkov S I; Ledentsov N N; Ustinov V M; Mutig A; Bimberg D

来源：Technical Physics Letters, 2012, 38(2): 106-109.

DOI：10.1134/S1063785012020101

Results of a comparative study of the structural parameters and the static and dynamic characteristics of vertical-cavity surface-emitting lasers (VCSELs) with microresonators based on Al0.15Ga0.85As and Al0.8Ga0.2As are presented. It is established that the vertical oxidation of layers in the Al0.8Ga0.2As microresonator during formation of the current aperture leads to a significant increase in the oxide thickness. This leads to a considerable decrease in parasitic capacitance of the device and a 1.7- to 2-fold growth in the cut-off frequency of a low-frequency filter formed by parasitic elements of the equivalent electric scheme of the device.

• 出版日期2012-2