Microstructural investigation of pulsed-laser-deposited SrRuO3 films on Si with SrO buffer layers

作者：Chen YX^*; Koike J; Higuchi T; Iwashita S; Ishida M; Shimoda T

来源：Japanese Journal of Applied Physics, 2001, 40(12A): L1305-L1307.

DOI：10.1143/JJAP.40.L1305

• microstructure
• SrRuO3 films
• SrO buffer layers
• high-resolution electron microscopy
• interface

Conductive SrRuO3 films were deposited on {001} Si substrates by pulsed-laser deposition using SrO as buffer layers. The microstructure and orientation relationships (ORs) of the constituting layers were investigated by X-ray diffraction, transn-dssion electron microscopy, hi.-h-resolution electron microscopy and energy dispersive X-ray spectroscopy. Good epitaxial growth of SrO and SrRuO3 films on the Si substrates was achieved. Multiple domains were formed in the SrRuO3 films. The domain boundaries were nearly perpendicular to the interface between the SrRuO3 films and the SrO buffer layers. Three ORs among Si, SrO and SrRuO3 were observed, indicating a new OR between Si and SrO.

• 出版日期2001-12-1