Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate

作者：Plis E; Rodriguez J B; Balakrishnan G; Sharma Y D; Kim H S; Rotter T; Krishna S^*

来源：Semiconductor Science and Technology, 2010, 25(8): 085010.

DOI：10.1088/0268-1242/25/8/085010

We report on a type-II InAs/GaSb strained layer superlattice (SLS) photodetector (lambda(cut-off) similar to 4.3 mu m at 77 K) with nBn design grown on a GaAs substrate using interfacial misfit dislocation arrays to minimize threading dislocations in the active region. At 77 K and 0.1 V of the applied bias, the dark current density was equal to 6 x 10(-4) A cm(-2) and the maximum specific detectivity D* was estimated to 1.2 x 10(11) Jones (at 0 V). At 293 K, the zero-bias D* was found to be similar to 10(9) Jones which is comparable to the nBn InAs/GaSb SLS detector grown on the GaSb substrate.

• 出版日期2010-8-2