All-Metal-Nitride RRAM Devices

作者：Zhang Zhiping^*; Gao Bin; Fang Zheng; Wang Xinpeng; Tang Yanzhe; Sohn Joon; Wong H S Philip; Wong S Simon; Lo Guo Qiang

来源：IEEE Electron Device Letters, 2015, 36(1): 29-31.

DOI：10.1109/LED.2014.2367542

• Aluminium nitride (AlN)
• titanium nitride (TiN)
• hafnium nitride (HfN)
• resistive random access memory (RRAM)
• bipolar switching

This letter presents the novel CMOS-compatible all-metal-nitride resistive random access memory (RRAM) devices based on the TiN/AlN/TiN stack. The device has low operation current <100 mu A, retention of >3x10(5) s at 150 degrees C, and ac endurance of up to 10(5) Hz. The device switch characteristics are found to agree with the filamentary switch mechanism. In addition, the RRAM devices built with an additional hafnium nitride capping layer have showed less switch voltage variations and stable switch characteristics.

• 出版日期2015-1
• 单位北京大学