科研之友
微信
新浪微博
Facebook
分享链接
摘要
A directed-assembly method on the basis of graphene oxide (GO) pieces is developed, which allowed us to mass-produce a uniform array of graphene-based ambipolar memory devices using only conventional microfabrication facilities. Significantly, we successfully demonstrated that this device can be operated as both conventional conductivity-switching memory and new type-switching memory by adjusting the charge density on the nanoparticles. [GRAPHICS] .
- 出版日期2010-5-11
