科研之友
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摘要
A magnetoresistance device is proposed in a two-dimensional electron gas modulated by a magnetic barrier, which can be realized experimentally by the deposition of two parallel ferromagnetic strips on the top and bottom of a GaAs heterostructure. A considerable magnetoresistance effect is found in this device, due to the significant difference between electronic transmissions through parallel and antiparallel magnetization configurations.
- 出版日期2008-7
- 单位湖南第一师范学院
