摘要

The effect of level statistics on critical level spacings <d(c)> of odd/even electrons are calculated by using the mean field self-consistency equation in three different Gauss ensembles (Gauss Orthogonal Ensemble, Gauss Unitary Ensemble, and Gauss Symplectic Ensemble) according to Random Matrix Theory. We obtain the ratios of critical level spacings of even electrons to those of odd electrons in different spin-orbit coupling and magnetic fields quantitatively, and the relations of <(Delta)over cap>(0) and average level spacings <d(o)> in the odd case.