Measurement of small specific contact resistance of metals with resistive semiconductors

作者：Deepak^*; Krishna Hare

来源：Journal of Electronic Materials, 2007, 36(5): 598-605.

DOI：10.1007/s11664-007-0091-y

• specific contact resistance
• gallium nitride (GaN)
• contacts

The method to measure specific contact resistance of metals with resistive semiconductors has difficulties associated with it. These difficulties are discussed in relation to contacts on gallium nitride (GaN). The specific contact resistance of a Ni/Au contact on p-GaN after oxygen anneal was determined to be on the order of 10(-1) Omega cm(2), which is significantly higher than the best value (10(-6) Omega cm(2)) reported in the literature. However, the basic measurement of current-voltage (I-V) characteristics of the contact in determining the specific contact resistance is not significantly different. The analysis shows that in materials such as p-GaN, which is highly resistive, a low specific contact resistance may be difficult to measure by standard transmission line methods below approximately 10(-2)-10(-3) Omega cm(2) in p-GaN.

• 出版日期2007-5