摘要

In order to investigate the effect of tangential port structure on vortex diode performance, CFD simulations were carried out on vortex diodes with tangential port of 0°, 3°, 5°, 7° and 10° respectively. Standard k-Ε model was selected for forward flow, while RNG k-Ε model was selected for reverse flow. The results show that the reverse resistance coefficient increases as the angel increases because of the growing velocity of forced vortex. As the same time, the forward resistance coefficient also increases in results of the growing vorticity. Tangential port of 0° yields the lowest Ε and Ε increases as the angel increases till 7°. Tangential port of 7° yields the highest Ε. which means vortex diode with tangential port of 7° has the best comprehensive performance. The results provide some basis for optimizing the vortex diode.

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