科研之友
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摘要
An attempt has been made to study the performance comparison of homojunctions fabricated using AlAs codoped and AlAsN tridoped low resistive and stable p-ZnO thin films for optoelectronics devices (light emitting diodes and optic sensors) application. The Al monodoped ZnO film has been used as n-layer. X-ray diffraction and time of flight-secondary ion mass spectrometry confirms the formation of good structural quality bilayer homojunction. The junction parameters have been determined using I-V characteristics of the junction by Cheung's and Norde's methods. It has been found that, the homojunction fabricated using tridoped ZnO film showed better performance in comparison with codoped film.
- 出版日期2014
